Title Solid State Devices
Type departmental
Duration Sep 22,2019-Jan 23, 2020
Short Details

This is one of the advanced level courses in Electrical & Electronic Engineering. The primary goal of this course is to provide students with the essential background on semiconductor materials and devices including a basic understanding of crystal structure, energy bands, charge carriers and junctions.

Details

Course modules (Tentative:

     0. Introduction/Motivation – why study semiconductor device physics?

1. Crystal structures, atoms, and electronic properties (Ch 1-2) (CT-1)

a. Crystal structures

b. Fabrication

c. Atomic structure, the Bohr model and Schrodinger wave equation

d. Structure of semiconductors, conductors, and insulators. How structure relates to material properties

2. Energy bands and carriers in semiconductors (Ch. 3) (CT-2)

a. Mobile vs. static carriers. Electrons and holes

b. Intrinsic semiconductors: carrier concentrations, density of states, conductivity

c. Energy band Diagrams: conduction and valence band, Fermi level

d. Doped semiconductors: acceptors and donors, how they alter the physical structure and the energy band, effect on carrier concentration

e. Carrier transport mechanisms: Drift, Diffusion

f. Carrier generation and recombination

3. PN Junction diode (Ch. 5) (CT-3)

a. Physical concepts: Depletion layer, mobile and static charges, drift and diffusion, coulomb’s law, diffusion/electrical balance

b. Energy band interpretation: Band bending, junction potential, drift and diffusion

c. Physical characteristics: depletion width, depletion and diffusion capacitance

d. Electrical characteristics: IV characteristics, forward and reverse bias, reverse breakdown, small signal model

4. MOSFETs (Ch. 6) (CT-4)

a. Physical concepts: Inversion channels, channel pinch-off

b. Physical characteristics: gate thickness, substrate doping, work function

c. Electrical characteristics: IV characteristics, cutoff/triode/saturation regions of operation, Early voltage, small signal model

 

5. Time Permitting Bipolar Junction Transistor (Ch.7)

a. Physical concepts: Emitter/Base/Collector orientation and doping, carrier ‘sweeping’, base recombination

b. Energy band interpretation: band bending in a three terminal device, potential wells, drift and diffusion

c. Physical characteristics: Capacitance, depletion width, base width

d. Electrical characteristics: Gain, Injection efficiency, collector efficiency, emitter efficiency, Base transport factor, IV Characteristics, forward active/reverse active/cutoff/saturation, small signal model

6. Time Permitting Other Topics

a. Fabrication and Process Technology

o   Basic introduction to process technology: Photolithography, etching, oxidation, diffusion

o   BJT fabrication

o   MOSFET fabrication

b. Optoelectronic devices

o   Photodiodes, including solar cells and CCDs

o   Light emitting diodes (LEDs)

                          Lasers

Version v1
Level/Term L4/T1
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